SI1551DL-T1 datasheet(4/8 Pages) VISHAY

Il numero della parte	SI1551DL-T1

Spiegazioni elettronici	Complementary 20-V (D-S) MOSFET

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Si1551DL

Vishay Siliconix

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Document Number: 71255

S-42353—Rev. C, 20-Dec-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

1

2

3

4

5

6

0

1234

5

TJ = 150_C

TJ = 25_C

ID = 0.29 A

1

0.1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

0

3

5

1

2

Single Pulse Power

Time (sec)

4

1

100

600

10

10−1

10−2

10−3

10−2

1

10

600

10−1

10−4

100

−0.3

−0.2

−0.1

−0.0

0.1

0.2

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ − Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA =400_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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