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SI1469DH-T1-E3 Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI1469DH-T1-E3 Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74441 S-70195-Rev. A, 29-Jan-07 Vishay Siliconix Si1469DH TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0.01 0.1 1 10 TJ = 25 °C TJ = 150 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient ID = 2 A VGS - Gate-to-Source Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0246 8 10 125 °C 25 °C 0 6 12 18 24 30 0 1 1 1 0 0 . 0 0.01 Time (sec) 0.1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) isspecified TC = 25 °C Single Pulse 100 ms 1 s dc 1 ms 10 ms Limited by rDS(on) 0.01 0.1 1 10 0.01 0.1 1 10 100 10 s |
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