SI1419DH datasheet(2/6 Pages) VISHAY

Il numero della parte	SI1419DH

Spiegazioni elettronici	P-Channel 200-V (D-S) MOSFET

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Si1419DH

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 73241

S-50368—Rev. B, 28-Feb-05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −100 mA

−2.5

−4.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −200 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −200 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS = −15 V, VGS = −10 V

−0.5

A

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −0.4 A

3.98

5.0

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −6 V, ID = −0.4 A

4.06

5.1

W

Forward Transconductancea

gfs

VDS = −10 V, ID = −0.4 A

1.0

S

Diode Forward Voltagea

VSD

IS = −0.4 A, VGS = 0 V

−0.80

−1.1

V

Dynamicb

Total Gate Charge

Qg

4.1

6.2

Gate-Source Charge

Qgs

VDS = −100 V, VGS = −10 V, ID = −0.4 A

0.8

nC

Gate-Drain Charge

Qgd

DS

, GS

, D

1.3

Gate Resistance

Rg

f = 1.0 MHz

17

W

Turn-On Delay Time

td(on)

6

9

Rise Time

tr

VDD = −100 V, RL = 100 W

12

18

Turn-Off Delay Time

td(off)

VDD = −100 V, RL = 100 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

12

18

ns

Fall Time

tf

g

12

18

ns

Reverse Recovery Time

trr

IF = 0 4 A di/dt = 100 A/ms

55

83

Body Diode Reverse Recovery Charge

Qrr

IF = −0.4 A, di/dt = 100 A/ms

130

200

nC

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.1

0.2

0.3

0.4

0.5

0

1234

5

0.0

0.1

0.2

0.3

0.4

0.5

0

2468

10

VGS = 10 thru 5 V

25_C

TC = 125_C

−55_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

4 V

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