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SI1417EDH Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1417EDH Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si1417EDH Vishay Siliconix New Product www.vishay.com 2 Document Number: 71412 S-03187—Rev. A, 05-Mar-01 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.45 V VDS = 0 V, VGS = "4.5 V "1.5 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "10 mA VDS = –9.6 V, VGS = 0 V –1 m Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V, TJ = 85_C –5 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –4 A VGS = –4.5 V, ID = –3.3 A 0.070 0.085 Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –2.9 A 0.095 0.115 W DS(on) VGS = –1.8 V, ID = –1.0 A 0.133 0.160 Forward Transconductancea gfs VDS = –10 V, ID = –3.3 A 8 S Diode Forward Voltagea VSD IS = –1.4 A, VGS = 0 V –0.80 –1.1 V Dynamicb Total Gate Charge Qg 5.8 8 Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –3.3 A 1.3 nC Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 0.60 1.0 Rise Time tr VDD = –6 V, RL = 6 W 1.4 2.1 m Turn-Off Delay Time td(off) VDD = –6 V, RL = 6 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 4.9 7.5 ms Fall Time tf 4.9 7.5 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.01 100 10,000 Gate Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 Gate-Current vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) 0.1 1 10 1,000 VGS – Gate-to-Source Voltage (V) 0 36 9 12 TJ = 25_C TJ = 150_C 8 6 4 2 0 |
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