SI1307EDL datasheet(3/6 Pages) VISHAY

Il numero della parte	SI1307EDL

Spiegazioni elettronici	P-Channel 1.8-V (G-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Si1307EDL

Vishay Siliconix

New Product

Document Number: 71096

Pending—Rev. A, 10-Nov-99

www.siliconix.com

S FaxBack 408-970-5600

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

0.2

0.4

0.6

0.8

1.0

1.2

0

100

200

300

400

036

9

12

0

0.4

0.8

1.2

1.6

–50

–25

0

25

50

75

100

125

150

0

2

4

6

8

012345

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

01234567

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 6 V

ID = 1 A

ID – Drain Current (A)

VGS = 4.5 V

ID = 1 A

VGS = 2.5 V

VGS = 1.8 V

Gate Charge

OnResistance vs. Drain Current

Qg – Total Gate Charge (nC)

Capacitance

OnResistance vs. Junction Temperature

TJ – Junction Temperature (_C)

0

0.4

0.8

1.2

1.6

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

ID = 1 A

10

1

0.001

SourceDrain Diode Forward Voltage

OnResistance vs. GatetoSource Voltage

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

VGS = 4.5 V

0.1

0.01

TJ = 150_C

TJ = 25_C

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