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SI1070X-T1-GE3 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI1070X-T1-GE3 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 73893 S-81528-Rev. C, 30-Jun-08 www.vishay.com 3 Vishay Siliconix Si1070X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Qg - Gate Charge 0 1 2 3 4 5 6 0.0 0.6 1.2 1.8 2.4 VGS = 5 V thru 3 V VDS - Drain-to-Source Voltage (V) VGS = 2.5 V VGS = 2 V VGS = 1.5 V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 01 2 3 4 5 6 VGS = 4.5 V I D - Drain Current (A) VGS = 2.5 V 0 1 2 3 4 5 0 1234 5 ID = 1.2 A Qg - Total Gate Charge (nC) VGS = 24 V VDS = 15 V Transfer Characteristics curves vs. Temp Capacitance On-Resistance vs. Junction Temperature 0.0 0.6 1.2 1.8 2.4 3.0 0.0 0.6 1.2 1.8 2.4 3.0 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) T = C T = C 0 100 200 300 400 500 0 6 12 18 24 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 1.2 A TJ - Junction Temperature (°C) VGS = 2.5 V ID = 1 A |
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