SI1050X-T1-E3 datasheet(2/6 Pages) VISHAY

Il numero della parte	SI1050X-T1-E3

Spiegazioni elettronici	N-Channel 8-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 73896

S-80641-Rev. B, 24-Mar-08

Vishay Siliconix

Si1050X

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

8V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

18.2

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 2.55

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.35

0.9

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 8 V, VGS = 0 V

1nA

VDS = 8 V, VGS = 0 V, TJ = 85 °C

10

µA

On-State Drain Currenta

ID(on)

VDS = ≥ 5 V, VGS = 4.5 V

6

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 1.34 A

0.071

0.086

Ω

VGS = 2.5 V, ID = 1.29 A

0.078

0.093

VGS = 1.8 V, ID = 1.23 A

0.085

0.102

VGS = 1.5 V, ID = 0.76 A

0.092

0.120

Forward Transconductance

gfs

VDS = 4 V, ID = 1.34 A

4.12

S

Dynamicb

Input Capacitance

Ciss

VDS = 4 V, VGS = 0 V, f = 1 MHz

585

pF

Output Capacitance

Coss

190

Reverse Transfer Capacitance

Crss

130

Total Gate Charge

Qg

VDS = 4 V, VGS = 5 V, ID = 1.34 A

7.7

11.6

nC

VDS = 4 V, VGS = 4.5 V, ID = 1.34 A

7.1

10.7

Gate-Source Charge

Qgs

1.14

Gate-Drain Charge

Qgd

1.69

Gate Resistance

Rg

f = 1 MHz

3.5

4.6

Ω

Turn-On Delay Time

td(on)

VDD = 4 V, RL = 3.6 Ω

ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω

6.8

10.2

ns

Rise Time

tr

35

53

Turn-Off DelayTime

td(off)

25

37.5

Fall Time

tf

69

Drain-Source Body Diode Characteristics

Pulse Diode Forward Currenta

ISM

6A

Body Diode Voltage

VSD

IS = 1.0 A

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 1.0 A, di/dt = 100 A/µs

18.5

28

nC

Body Diode Reverse Recovery Charge

Qrr

3.7

5.7

ns

Reverse Recovery Fall Time

ta

6.7

Reverse Recovery Rise Time

tb

11.8

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