SI1023X-T1-GE3 datasheet(1/5 Pages) VISHAY

Il numero della parte	SI1023X-T1-GE3

Spiegazioni elettronici	Dual P-Channel 20-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si1023X

Document Number: 71169

S-80643-Rev. B, 24-Mar-08

www.vishay.com

1

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free Option Available

•

TrenchFET® Power MOSFET: 1.8 V Rated

•

Very Small Footprint

•

High-Side Switching

•

Low On-Resistance: 1.2

Ω

•

Low Threshold: 0.8 V (typ.)

•

Fast Switching Speed: 14 ns

•

1.8 V Operation

•

Gate-Source ESD Protected: 2000 V

BENEFITS

•

Ease in Driving Switches

•

Low Offset (Error) Voltage

•

Low-Voltage Operation

•

High-Speed Circuits

•

Low Battery Voltage Operation

APPLICATIONS

•

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

•

Battery Operated Systems

•

Power Supply Converter Circuits

•

Load/Power Switching Cell Phones, Pagers

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (mA)

- 20

1.2 at VGS = - 4.5 V

- 350

1.6 at VGS = - 2.5 V

- 300

2.7 at VGS = - 1.8 V

- 150

Marking Code: B

Top View

3

1

D2

G2

S1

5

2

4

6

D1

S2

G1

SOT-563

SC-89

Ordering Information: Si1023X-T1-E3 (Lead (Pb)-free)

Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Surface Mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 6

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 390

- 370

mA

TA = 85 °C

- 280

- 265

Pulsed Drain Currentb

IDM

- 650

Continuous Source Current (Diode Conduction)a

IS

- 450

- 380

Maximum Power Dissipationa

TA = 25 °C

PD

280

250

mW

TA = 85 °C

145

130

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

RoHS

COMPLIANT

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