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MMBD914-V Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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MMBD914-V Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85734 Rev. 1.3, 07-Apr-05 MMBD914-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in mm (Inches) Parameter Test condition Symbol Min Typ. Max Unit Forward voltage drop IF = 10 mA VF 1.0 V Reverse current VR = 20 V IR 25 nA VR = 75 V IR 5.0 µA Reverse recovery time IF = IR = 10 mA, VR = 6 V, RL = 100 Ω, to Irr = 1 mA trr 4.0 ns Diode capacitance VR = 0, f = 1.0 MHz Ctot 4.0 pF 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 2.35 (.092) 2.6 (.102) ISO Method E Mounting Pad Layout |
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