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STY100NS20FD Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STY100NS20FD Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 12 page May 2006 Rev 3 1/12 12 STY100NS20FD N-channel 200V - 0.022 Ω - 100A - Max247 MESH OVERLAY™ Power MOSFET General features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating ■ Low intrinsic capacitance ■ Fast body-drain diode:low trr, Qrr Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STY100NS20FD 200V <0.024 Ω 100A 1 2 3 Max247 www.st.com Order codes Part number Marking Package Packaging STY100NS20FD Y100NS20FD Max247 Tube |
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