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TDA2008V Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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TDA2008V Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 9 page 4/9 Symbol Parameter Test conditions Min. Typ. Max. Unit Vs Supply voltage 10 28 V Vo Quiescent output voltage (pin 4) 10.5 V Id Quiescent drain current (pin 5) 65 115 mA Po Output power d = 10% RL =8 Ω 8W f = 1 KHz RL =4 Ω 10 12 W Vi(RMS) Input saturation voltage 300 mV Vi Input sensitivity f = 1 KHz Po = 0.5W Po =8W Po = 0.5W Po = 12W RL =8 Ω RL =8 Ω RL =4 Ω RL =4 Ω 20 80 14 70 mV mV mV mV B Frequency response (-3 dB) Po =1W RL =4 Ω 40 to 15,000 Hz d Distortion f = 1 KHz Po = 0.05 to 4W Po = 0.05 to 6W RL =8 Ω RL =4 Ω 0.12 0.12 1 1 % % Ri Input resistance (pin 1) f = 1 KHz 70 150 K Ω Gv Voltage gain (open loop) f = 1 KHz RL =8 Ω 80 dB Gv Voltage gain (closed loop) 39.5 40 40.5 dB eN Input noise voltage BW = 22Hz to 22 KHz 15 µV iN Input noise current 60 200 pA SVR Supply voltage rejection Vripple = 0.5 Rg = 10K Ω RL =4 Ω f = 100 Hz 30 36 dB ELECTRICAL CHARACTERISTICS ( Refer to the test circuit, Vs = 18V, Tamb =25 °C unless otherwise specified) Symbol Parameter Value Unit Rth-j-case Thermal resistance junction-case max 3 °C/W THERMAL DATA TDA2008 |
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