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STP180NS04ZC Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP180NS04ZC Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 12 page April 2008 Rev 1 1/12 12 ■ Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature Applications ■ Switching application Description This fully clamped Power MOSFET is produced by using the latest advanced company’s mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Figure 1. Internal schematic diagram Features Type VDSS RDS(on) max ID STP180NS04ZC Clamped < 4.2 m Ω 120 A 1 2 3 TO-220 Table 1. Device summary Order code Marking Package Packaging STP180NS04ZC P180NS04ZC TO-220 Tube STP180NS04ZC N-channel clamped 3.5 m Ω - 120 A TO-220 fully protected SAFeFET™ Power MOSFET www.st.com |
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