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2SK1316 Scheda tecnica(PDF) 5 Page - Renesas Technology Corp

Il numero della parte 2SK1316
Spiegazioni elettronici  Silicon N-Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1316 Scheda tecnica(HTML) 5 Page - Renesas Technology Corp

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2SK1315(L)(S), 2SK1316(L)(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1315 V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1316
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1315 I
DSS
250
µAV
DS = 360 V, VGS = 0
drain current
2SK1316
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1315 R
DS(on)
0.55
0.7
I
D = 4 A, VGS = 10 V *
1
on state resistance
2SK1316
0.60
0.8
Forward transfer admittance
|yfs|
4.5
7.5
S
I
D = 4 A, VDS = 10 V *
1
Input capacitance
Ciss
1150
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
340
pF
f = 1 MHz
Reverse transfer capacitance
Crss
55
pF
Turn-on delay time
t
d(on)
17
ns
I
D = 4 A, VGS = 10 V,
Rise time
t
r
55
ns
R
L = 7.5 Ω
Turn-off delay time
t
d(off)
100
ns
Fall time
t
f
—45
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
350
ns
I
F = 8 A, VGS = 0,
di
F/dt = 100 A/µs
Note:
1. Pulse test
See characteristic curves of 2SK1159, 2SK1160.


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