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2SK1518 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK1518 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1517, 2SK1518 Rev.2.00 Sep 07, 2005 page 4 of 6 1.0 40 160 Case Temperature TC (°C) 0.8 0.2 0 80 120 0 0.4 0.6 Static Drain to Source on State Resistance vs. Temperature –40 Pulse Test VGS = 10 V ID = 20 A 10 A 5 A 5 20 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 0.2 1 2 0.5 0.2 0.1 0.05 0.5 1 2 5 10 –25 °C TC = 25°C 75 °C VDS = 20 V Pulse Test 5,000 50 Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time 0.5 2,000 1,000 500 200 100 50 12 5 10 20 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 10,000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 1,000 100 10 Crss Coss Ciss VGS = 0 f = 1 MHz 500 80 200 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 40 120 160 0 200 300 20 16 4 0 8 12 VDD = 100 V 250 V 400 V VDD = 400 V 250 V 100 V ID = 20 A VDS VGS 500 50 Drain Current ID (A) 0.5 Switching Characteristics 200 100 50 20 10 5 12 5 10 20 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (off) tf td (on) tr • • |
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