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2SK1404 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK1404 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1404 Rev.3.00 May 15, 2006 page 4 of 6 5 40 160 Case Temperature Tc ( °C) 4 1 0 80 120 0 2 3 Static Drain to Source on State Resistance vs. Temperature –40 10 0.1 2 Drain Current ID (A) 2 0.2 0.2 1 1 0.5 0.05 0.5 Forward Transfer Admittance vs. Drain Current 5 5 0.1 1000 0.1 2 Reverse Drain Current IDR (A) 500 20 0.2 1 0.05 100 200 10 0.5 Body to Drain Diode Reverse Recovery Time 50 5 1000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 100 10000 10 1000 16 40 Dynamic Input Characteristics 800 200 824 32 400 600 20 16 4 0 8 12 0 0 Gate Charge Qg (nc) 500 Drain Current ID (A) 200 5 50 100 10 Switching Characteristics 0.2 0.5 0.1 1 20 210 5 ID = 5 A 2 A 1 A VGS = 10 V 75°C Pulse Test VDS = 20 V Pulse Test di / dt = 50 A / µs VGS = 0, Ta = 25°C Pulse Test Ciss Coss Crss VGS = 0 f = 1 MHz VGS VDS ID = 5 A tf tr td(off) td(on) VDD = 100 V 250 V 400 V VDD = 400 V 250 V 100 V VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % Tc = –25°C 25°C |
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