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2SK1339-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK1339-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1339 Rev.2.00 Sep 07, 2005 page 4 of 6 20 40 160 Case Temperature TC (°C) 16 4 080 120 0 8 12 Static Drain to Source on State Resistance vs. Temperature –40 VGS = 10 V Pulse Test ID = 3 A 2 A 1 A 5 0.1 2 Drain Current ID (A) 1 0.1 0.2 1 0.5 0.2 0.05 0.5 Forward Transfer Admittance vs. Drain Current 2 VDS = 20 V Pulse Test 75 °C TC = 25°C 5 –25 °C 5,000 0.1 2 Reverse Drain Current IDR (A) 2,000 100 0.2 1 0.05 500 1,000 50 0.5 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 200 5 1,000 16 40 Gate Charge Qg (nc) Dynamic Input Characteristics 800 200 824 32 400 600 20 16 4 0 8 12 0 400 V 600 V VDD = 250 V VGS VDS VDD = 600 V 400 V 250 V ID = 2 A 500 Drain Current ID (A) 200 5 50 100 0.05 10 Switching Characteristics td (off) 0.1 0.5 1 0.2 2 5 tf tr td (on) 20 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • • 100 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 VGS = 0 f = 1 MHz Crss Coss Ciss 1,000 1 |
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