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STPS640 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STPS640 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 6 page 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) Single pulse δ = 0.1 δ = 0.2 δ = 0.5 T δ=tp/T tp Fig. 4.1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AB / DPAK). 1E-3 1E-2 1E-1 1E+0 0 5 10 15 20 25 30 35 40 t(s) IM(A) Tc=75 °C Tc=130 °C Tc=100 °C IM t δ=0.5 Fig. 3-2: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (ISOWATT220AB). 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp Single pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AB). 0 5 10 15 20 25 30 35 40 1E-5 1E-4 1E-3 1E-2 VR(V) IR(A) Tj=150 °C Tj=75 °C Tj=100 °C Tj=125 °C Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). 1E-3 1E-2 1E-1 1E+0 0 5 10 15 20 25 30 35 40 45 t(s) IM(A) Tc=75 °C Tc=135 °C Tc=100 °C IM t δ=0.5 Fig. 3-1: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (TO-220AB/ DPAK). 12 5 10 20 50 10 100 500 VR(V) C(pF) F=1MHz Tj=25 °C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). STPS640CT/CF/CB 3/6 |
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