Motore di ricerca datesheet componenti elettronici |
|
2SK975TZ-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
|
2SK975TZ-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK975 Rev.2.00 Sep 07, 2005 page 4 of 6 80 Case Temperature TC (°C) 120 40 0 0.2 0.4 0.6 0.8 1.0 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 2 A Pulse Test VGS = 4 V VGS = 10 V 0.5 A 1 A 1 A 0.5 A 2 A Forward Transfer Admittance vs. Drain Current 5 2 1.0 0.5 0.2 0.1 0.05 0.05 0.1 0.2 0.5 1.0 5 Drain Current ID (A) 2 TC = 25°C VDS = 10 V Pulse Test –25 °C 75 °C 1000 500 200 100 50 20 10 0.05 0.1 0.5 5 Reverse Drain Current IDR (A) 1.0 0.2 2 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 1000 300 100 30 3 1 010 20 50 Drain to Source Voltage VDS (V) 30 10 40 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 02 6 8 Gate Charge Qg (nc) 4 20 16 12 8 4 Dynamic Input Characteristics 10 0 VDS VGS VDD = 50 V 10 V 25 V VDD = 50 V 25 V 10 V ID = 1.5 A Switching Characteristics 100 50 20 10 2 1 0.05 0.1 0.5 5 Drain Current ID (A) 1.0 0.2 2 5 td (off) tf VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % td (on) tr • • |
Codice articolo simile - 2SK975TZ-E |
|
Descrizione simile - 2SK975TZ-E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |