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FQA11N90_F109 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQA11N90_F109 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA11N90 / FQA11N90_F109 Rev. A2 September 2007 QFET ® FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features • 11.4A, 900V, RDS(on) = 0.96Ω @VGS = 10 V • Low gate charge ( typical 72 nC) • Low Crss ( typical 30pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G S GS D TO-3P FQA Series Symbol Parameter FQA11N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 11.4 A - Continuous (TC = 100°C) 7.2 A IDM Drain Current - Pulsed (Note 1) 45.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1000 mJ IAR Avalanche Current (Note 1) 11.4 A EAR Repetitive Avalanche Energy (Note 1) 30 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 300 W - Derate above 25°C 2.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.42 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
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