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FDG327NZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDG327NZ
Spiegazioni elettronici  20V N-Channel PowerTrenchO MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG327NZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
FDG327NZ Rev C1(W)
FDG327NZ
20V N-Channel PowerTrench
® MOSFET
General Description
This
N-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 1.5 A, 20 V.
RDS(ON) = 90 m
Ω @ V
GS = 4.5 V.
RDS(ON) = 100 m
Ω @ V
GS = 2.5 V
RDS(ON) = 140 m
Ω @ V
GS = 1.8 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
SC70-6
D
D
G
D
D
S
Pin 1
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 8
ID
Drain Current
– Continuous
(Note 1a)
1.5
A
– Pulsed
6
Power Dissipation for Single Operation
(Note 1a)
0.42
W
PD
(Note 1b)
0.38
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
333
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.37
FDG327NZ
7’’
8mm
3000 units
August 2008


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