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FDD6680AS Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD6680AS Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDD6680AS Rev A1 (X) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=13.5A 54 205 mJ IAR Drain-Source Avalanche Current 13.5 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C 29 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10 A VGS= 10 V, ID = 12.5A, TJ= 125°C 8.6 10.3 12.5 10.5 13.0 16.0 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 44 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 1200 pF Coss Output Capacitance 350 pF Crss Reverse Transfer Capacitance 120 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 6 12 ns td(off) Turn–Off Delay Time 28 45 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 22 ns td(on) Turn–On Delay Time 14 25 ns tr Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 20 32 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 11 20 ns Qg(TOT) Total Gate Charge at Vgs=10V 21 29 nC Qg Total Gate Charge at Vgs=5V 11 15 nC Qgs Gate–Source Charge 3 nC Qgd Gate–Drain Charge VDD = 15 V, ID = 12.5 A 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 4.4 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 4.4 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.5 0.6 0.7 V trr Diode Reverse Recovery Time IF = 12.5A, diF/dt = 300 A/µs (Note 3) 17 nS Qrr Diode Reverse Recovery Charge 11 nC |
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