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FDD5810 Scheda tecnica(PDF) 6 Page - Fairchild Semiconductor |
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FDD5810 Scheda tecnica(HTML) 6 Page - Fairchild Semiconductor |
6 / 7 page FDD5810 Rev. A (W) www.fairchildsemi.com 6 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current Typical Characteristics T J = 25°C unless otherwise noted 0.2 0.5 0.8 1.1 1.4 -80 -40 0 40 80 120 160 200 VGS = VDS, ID = 250μA TJ, JUNCTION TEMPERATURE (oC) 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) ID = 250μA 100 1000 0.1 1 10 60 10000 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz Ciss Coss Crss 10 0 2 4 6 8 10 05 10 15 20 25 Qg, GATE CHARGE (nC) VDD = 30V ID = 35A ID = 1A WAVEFORMS IN DESCENDING ORDER: |
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Descrizione simile - FDD5810 |
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