FDD5810 datasheet(5/7 Pages) FAIRCHILD

Il numero della parte	FDD5810

Spiegazioni elettronici	N-Channel Logic Level Trench짰 MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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5 / 7 page

FDD5810 Rev. A (W)

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5

Figure 5. Forward Bias Safe Operating Area

NOTE:

Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

Figure 9. Drain to Source On Resistance vs Gate

Voltage and Drain Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics T

J = 25°C unless otherwise noted

110

100

0.1

1

10

100

200

10us

100us

1ms

10ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25

oC

DC

200

1

10

100

0.001

0.01

0.1

1

10

100

500

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

STARTING TJ = 150oC

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

0

20

40

60

01.0

2.0

3.0

4.0

5.0

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = 25oC

TJ = -55oC

PULSE DURATION = 80

μs

DUTY CYCLE = 0.5% MAX

VDD = 6V

0

20

40

60

0

0.5

1.0

1.5

2.0

2.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

μs

DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS = 10V

VGS = 3.5V

VGS = 3V

VGS = 4.5V

VGS = 4V

VGS = 5V

14

18

22

26

24

68

10

ID = 1A

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 35A

PULSE DURATION = 80

μs

DUTY CYCLE = 0.5% MAX

30

-80

-40

0

40

80

120

160

200

0.4

0.8

1.2

1.6

2.0

2.4

2.8

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

ID = 32A

VGS = 10V

TJ, JUNCTION TEMPERATURE(oC)

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