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FDD5810 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDD5810 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDD5810 Rev. A (W) www.fairchildsemi.com 3 Switching Characteristics Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 110μH, IAS = 28A, VDD = 54V, VGS = 10V. ton Turn-On Time VDD = 30V, ID = 35A VGS = 5V, RGS = 11Ω - - 130 ns td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 75 - ns td(off) Turn-Off Delay Time - 26 - ns tf Fall Time - 34 - ns toff Turn-Off Time - - 90 ns VSD Source to Drain Diode Voltage ISD = 32A - - 1.25 V ISD = 16A - - 1.0 V trr Reverse Recovery Time IF = 35A, di/dt = 100A/μs - - 39 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/μs - - 35 nC |
Codice articolo simile - FDD5810_07 |
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Descrizione simile - FDD5810_07 |
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