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FDG6322C Scheda tecnica(PDF) 6 Page - Fairchild Semiconductor |
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FDG6322C Scheda tecnica(HTML) 6 Page - Fairchild Semiconductor |
6 / 9 page FDG6322C Rev.F1 Typical Electrical Characteristics: P-Channel Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. Figure 15. Transfer Characteristics. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 0 1 2 3 4 0 0.3 0.6 0.9 1.2 -V , DRAIN-SOURCE VOLTAGE (V) V =-4.5V GS DS -1.5V -2.7V -2.5V -2.0V -3.0V 0 0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 2.5 -I , DRAIN CURRENT (A) V = -2.0V GS D -3.5V -4.5V -2.7V -2.5V -3.0V 1 2 3 4 5 0 1 2 3 4 5 -V , GATE TO SOURCE VOLTAGE (V) GS I = -0.2A D T = 125 ° C J 25° C 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 -V , GATE TO SOURCE VOLTAGE (V) V = -5V DS GS T = -55°C J 125°C 25°C 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 -V , BODY DIODE FORWARD VOLTAGE (V) T = 125°C J 25°C -55°C V = 0V GS SD Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) J V = -4.5V GS I = -0.41A D Figure 13. On-Resistance Variation with Temperature. |
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