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FDG6322C Scheda tecnica(PDF) 5 Page - Fairchild Semiconductor |
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FDG6322C Scheda tecnica(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page FDG6322C Rev.F1 Typical Electrical Characteristics: N-Channel (continued) Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 Q , GATE CHARGE (nC) g I = 0.22A D V = 5V DS 10V 0.4 0.8 2 5 10 25 40 0.01 0.03 0.1 0.3 1 V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT DC DS 10s 100ms 10ms V = 4.5V SINGLE PULSE R = 415 °C/W T = 25°C θJA GS A 1s 0.1 0.3 1 3 10 25 2 3 5 8 15 30 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss 0.0001 0.001 0.01 0.1 1 10 200 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) SINGLE PULSE R =415°C/W T = 25°C θJA A |
Codice articolo simile - FDG6322C_08 |
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Descrizione simile - FDG6322C_08 |
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