FQP10N60C datasheet(3/10 Pages) FAIRCHILD

Il numero della parte	FQP10N60C

Spiegazioni elettronici	600V N-Channel MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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FQP10N60C / FQPF10N60C Rev. C

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom :

4.5 V

* Notes :

1. 250µs Pulse Test

2. T

C

= 25°C

V

DS

, Drain-Source Voltage [V]

24

68

10

-1

10

0

10

1

150°C

25°C

-55°C

* Notes :

1. V

DS

= 40V

2. 250µs Pulse Test

V

GS

, Gate-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150°C

* Notes :

1. V

GS

= 0V

2. 250µs Pulse Test

25°C

V

SD

, Source-Drain voltage [V]

0

5

10

15

20

25

30

35

0.0

0.5

1.0

1.5

2.0

V

GS

= 20V

V

GS

= 10V

* Note : T

J

= 25°C

I

D

, Drain Current [A]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Notes ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

0

10

2030

4050

0

2

4

6

8

10

12

V

DS

= 300V

V

DS

= 120V

V

DS

= 480V

* Note : I

D

= 9.5A

Q

G

, Total Gate Charge [nC]

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