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STP6NB90 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP6NB90 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 9 page STP6NB90 STP6NB90FP N - CHANNEL 900V - 1.7 Ω - 5.8A - TO-220/TO-220FP PowerMESH ™ MOSFET s TYPICAL RDS(on) = 1.7 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM June 1999 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP6NB90 STP6NB90F P VDS Drain-source Voltage (VGS =0) 900 V VDGR Drain- gate Volt age (RGS =20 k Ω) 900 V VGS G ate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC5.8 5.8(*) A ID Drain Current (continuous) at Tc =100 oC3.6 3.6(*) A IDM ( •) Drain Current (pulsed) 23 23 A Ptot T otal Dissipation at Tc =25 oC 135 40 W Derating Factor 0.92 0.32 W / o C dv/dt (1) Peak Diode Recovery volt age slope 4.5 4.5 V/ns VISO I nsulat ion W ithstand Voltage (DC) 2000 V Tstg Storage Temperat ure -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 6Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX (*) Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID ST P6NB90 ST P6NB90FP 900 V 900 V <2 Ω <2 Ω 5.8 A 5.8 A 1/9 |
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