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STP6N25 Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STP6N25
Spiegazioni elettronici  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6N25 Scheda tecnica(HTML) 1 Page - STMicroelectronics

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STP6N25
STP6N25FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.7
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
INDUSTRIAL ACTUATORS
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
June 1993
TYPE
VDSS
R DS(on)
ID
STP6N25
STP6N25FI
250 V
250 V
<1
Ω
<1
Ω
6A
4A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP6N25
STP6N25FI
VDS
Drain-source Voltage (VGS =0)
250
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)250
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC6
4
A
ID
Drain Current (cont inuous) at T c =100
oC4
2.6
A
IDM(
•)
Drain Current (pulsed)
24
24
A
Ptot
Total Dissipation at Tc =25
oC70
35
W
Derating Factor
0. 56
0.28
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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