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STP16NF06 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP16NF06 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 April 2002 . STP16NF06 STP16NF06FP N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.08Ω s EXCEPTIONAL dv/dt CAPABILITY s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT TYPE VDSS RDS(on) ID STP16NF06 STP60NF06FP 60 V 60 V <0.1 Ω <0.1 Ω 16 A 11 A 1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (*) Current Limited by package’s thermal resistance (1) ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25 oC, ID = 8A, VDD = 30V Symbol Parameter Value Unit STP16NF06 STP16NF06FP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 16 11(*) A ID Drain Current (continuous) at TC = 100°C 11 7.5(*) A IDM(•) Drain Current (pulsed) 64 44(*) A Ptot Total Dissipation at TC = 25°C 45 25 W Derating Factor 0.3 0.17 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 130 mJ VISO Insulation Withstand Voltage (DC) -------- 2500 V Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
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