STP12PF06 datasheet(3/8 Pages) STMICROELECTRONICS

Il numero della parte	STP12PF06

Spiegazioni elettronici	P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay T ime

Rise Time

VDD =30 V

ID =6 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

20

40

ns

Qg

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =48 V ID =12 A VGS =10 V

16

4

6

21

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay T ime

Fall T ime

VDD =30 V

ID =6 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

40

10

ns

tr(Voff)

tf

tc

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =48 V

I D =12 A

RG =4.7

Ω

VGS =10 V

(Induct ive Load, see fig. 5)

10

17

30

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

10

40

A

VSD (

∗)Forward On Voltage

ISD =12 A

VGS =0

2. 5

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 12 A

di/dt = 100 A/

µs

VDD =30 V

Tj =150

oC

(see t est circuit, f ig. 5)

100

260

5.2

ns

nC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STP12PF06

3/8

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