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STULPI01BTBR Scheda tecnica(PDF) 11 Page - STMicroelectronics |
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STULPI01BTBR Scheda tecnica(HTML) 11 Page - STMicroelectronics |
11 / 44 page STULPI01A - STULPI01B Electrical characteristics 11/44 Symbol Parameter Test conditions Min. Typ. Max. Unit IIL Low level input leakage current VIL = 0.2V ±1.0 µA VPDH High level input voltage (CSn/PWRDN pin) VBAT=3.0V to 4.5V 1.4 V VPDL Low level input voltage (CSn/PWRDN pin) VBAT=3.0V to 4.5V 0.4 V IPDH High level input leakage current (CSn/PWRDN pin) VPD = 1.4V, VBAT = 4.5V ±1.0 µA IPDL Low level input leakage current (CSn/PWRDN pin) VPD = 0.4V, VBAT = 4.5V ±1.0 µA VFAULTH High level input voltage (VB_REF_FAULT pin) Overcurrent_PD bit is set 0.65xV3V3 V VFAULTL Low level input voltage (VB_REF_FAULT pin) Overcurrent_PD bit is set 0.15xV3V3 V RIN_VB_REF VB_REF_FAULT pin input resistance 112 148 168 k Ω VXI_HYST_EXT External clock input hysteresis XO = ‘0’ @ reset 500 mV VXIH High level input voltage (XI pin) XO = ‘0’ @ reset 0.65xV1V8VIO V VXIL Low level input voltage (XI pin) XO = ‘0’ @ reset 0.15xV1V8VIO V VBUS VBUS_LKG VBUS leakage voltage No load 200 mV RVBUS VBUS input impedance 40 100 k Ω VBUS_VLD VBUS valid comparator threshold 1k Ω series resistors 4.4 4.75 V VSESS_VLD Session valid comparator threshold for both A and B device Low to high transition 0.8 1.45 2.0 V High to low transition 1.25 V VSESS_END Session end comparator threshold 0.2 0.8 V RVBUS_PU VBUS charge pull-up resistance 650 950 1150 Ω RVBUS_PD VBUS discharge pull-down resistance 800 1250 1500 Ω Table 6. Electrical characteristics (continued) (Characteristics measured over recommended operating conditions unless otherwise noted. All typical values are referred to TA = 25 °C, V1V8IO = 1.8 V, VBAT = 3.6 V, RREF = 12 kΩ; CT = 4.7 µF) |
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