TP23753 datasheet(4/27 Pages) TI

Il numero della parte	TP23753

Spiegazioni elettronici	IEEE 802.3-2005 PoE INTERFACE AND ISOLATED CONVERTER CONTROLLER

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Produttore elettronici	TI [Texas Instruments]

Homepage	http://www.ti.com

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ELECTRICAL CHARACTERISTICS

TPS23753

SLVS853A – JUNE 2008 – REVISED JUNE 2008.............................................................................................................................................................. www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

Unless otherwise noted: CS = APD = CTL = RTN, GATE open, RFRS = 60.4 kΩ, RBLNK = 249 kΩ, CVB = CVC = 0.1 µF, RDEN =

24.9 k

Ω, RCLS open, VVDD-VSS = 48 V, VVDD1-RTN = 48 V, 8.5 V ≤ VVC-RTN ≤ 18 V, –40°C ≤ TJ ≤ 125°C

Controller Section Only

[VSS = RTN and VDD = VDD1] or [VSS = RTN = VDD], all voltages referred to RTN. Typical specifications are at 25°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GATE

Source current

VCTL = VB, VC = 12 V, GATE high, Pulsed measurement

0.30

0.46

0.60

A

Sink current

VCTL = VB, VC = 12 V, GATE low, Pulsed measurement

0.50

0.79

1.1

A

APD

VAPDEN

VAPD↑

1.42

1.5

1.58

Threshold voltage

V

VAPDH

Hysteresis(2)

0.28

0.3

0.32

THERMAL SHUTDOWN

Turn off temperature

135

145

155

°C

Hysteresis(3)

20

°C

(2)

The hysteresis tolerance tracks the rising threshold for a given device.

(3)

These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's

product warranty.

PoE and Control

[VDD = VDD1] or [VDD1] = RTN, VVC-RTN = 0 V, all voltages referred to VSS. Typical specifications are at 25°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DEN (DETECTION)

(VDD = VDD1 = RTN = VSUPPLY positive)

Measure ISUPPLY

Detection current

VDD = 1.6 V

62

64.3

66.5

µA

VDD = 10 V

399

406

413

Detection bias current

VDD = 10 V, DEN open, Measure ISUPPLY

5.2

12

µA

VPD_DIS

Hotswap disable threshold

3

4

5

V

Ilkg

DEN leakage current

VDEN = VDD = 57 V, Float VDD1 and RTN, Measure IDEN

0.1

5

µA

CLS (CLASSIFICATION)

(VDD = VDD1 = RTN = VSUPPLY positive)

13 V

≤ VDD ≤ 21 V, Measure ISUPPLY

RCLS = 1270 Ω

1.8

2.14

2.4

RCLS = 243 Ω

9.9

10.6

11.3

ICLS

Classification current

mA

RCLS = 137 Ω

17.6

18.6

19.4

RCLS = 90.9 Ω

26.5

27.9

29.3

RCLS = 63.4 Ω

38

39.9

42

VCL_ON

Regulator turns on, VDD rising

10

11.7

13

Classification regulator lower

V

threshold

VCL_HYS

Hysteresis(1)

1.9

2.05

2.2

VCU_OFF

Regulator turns off, VDD rising

21

22

23

Classification regulator upper

V

threshold

VCU_HYS

Hysteresis(1)

0.5

0.77

1

Ilkg

Leakage current

VDD = 57 V, VCLS = 0 V, DEN = VSS, Measure ICLS

1

µA

RTN (PASS DEVICE)

(VDD1 = RTN)

On resistance

0.7

1.2

Ω

Current limit

VRTN = 1.5 V, VDD = 48 V, Pulsed Measurement

405

450

505

mA

Inrush limit

VRTN = 2 V, VDD: 0 V → 48 V, Pulsed Measurement

100

140

180

mA

Foldback voltage threshold

VDD rising

11

12.3

13.6

V

Ilkg

Leakage current

VDD = VRTN = 100 V, DEN = VSS

40

µA

UVLO

UVLO_R

VDD rising

33.9

35

36.1

Undervoltage lockout threshold

V

UVLO_H

Hysteresis (1)

4.40

4.55

4.70

(1)

The hysteresis tolerance tracks the rising threshold for a given device.

4

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