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STB70NF03L Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STB70NF03L Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =15 V ID =35 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 20 350 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =24 V ID =46 A VGS =10 V 35 5 10 45 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(off) tf Turn-off Delay T ime Fall T ime VDD =15 V ID =35 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 35 65 ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 70 280 A A VSD ( ∗)Forward On Voltage ISD =70 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 70 A di/dt = 100 A/ µs VDD =15 V Tj =150 oC (see t est circuit, f ig. 5) 70 105 2.4 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STB70NF03L 3/6 |
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