STP14NF10FP datasheet(1/11 Pages) STMICROELECTRONICS

Il numero della parte	STP14NF10FP

Spiegazioni elettronici	N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

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June 2002

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STB14NF10

STP14NF10 STP14NF10FP

N-CHANNEL 100V - 0.115

Ω - 15A TO-220/TO-220FP/D2PAK

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.115 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET™ process has specifically been de-

signed to minimize input capacitance and gate charge. It

is therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended for

any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STB14NF10

STP14NF10

STP14NF10FP

100 V

<0.13

Ω

<0.13

Ω

<0.13

Ω

15 A

10 A

TO-220

1

2

3

TO-220FP

1

3

D2PAK

TO-263

(Suffix “T4”)

1

2

3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 15A, VDD= 50V

Symbol

Parameter

Value

Unit

STB14NF10

STP14NF10

STP14NF10FP

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

15

10

A

ID

Drain Current (continuous) at TC = 100°C

10

6.3

A

IDM(•)

Drain Current (pulsed)

60

40

A

Ptot

Total Dissipation at TC = 25°C

60

25

W

Derating Factor

0.4

0.17

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

70

mJ

VISO

Insulation Withstand Voltage (DC)

------

2000

V

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STP14NF10FP	516Kb / 16P	N-channel 100V - 0.115廓 - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET
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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STB14NF10	516Kb / 16P	N-channel 100V - 0.115廓 - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET
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