STP14NF10 datasheet(3/11 Pages) STMICROELECTRONICS

Il numero della parte	STP14NF10

Spiegazioni elettronici	N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

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STB14NF10 STP14NF10 STP14NF10FP

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 50 V

ID = 7 A

RG = 4.7 Ω

VGS = 10 V

(Resistive Load, Figure 3)

16

25

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD= 80 V ID= 12 A VGS= 10V

15.5

3.7

4.7

21

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 50 V

ID = 7 A

RG = 4.7Ω,

VGS = 10 V

(Resistive Load, Figure 3)

32

8

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

15

60

A

VSD (*)

Forward On Voltage

ISD = 14 A

VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 14 A

di/dt = 100A/µs

VDD = 50 V

Tj = 150°C

(see test circuit, Figure 5)

90

230

5

ns

nC

A

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area for TO-220FP

Safe Operating Area for TO-220

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