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STD90N4F3 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD90N4F3 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 14 page STD90N4F3 - STP90N4F3 - STU90N4F3 Electrical ratings 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 40 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 80 A ID Drain current (continuous) at TC = 100°C 65 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C dv/dt (3) 3. ISD < 80 A, di/dt < 400A/µs, VDS < V(BR)DSS, Tj < Tjmax Peak diode recovery voltage slope 8 V/ns EAS (4) 4. Starting Tj = 25°C, ID = 40A, VDD = 30V Single pulse avalanche energy 400 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit TO-220 IPAK DPAK Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 100 -- °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 2Oz Cu board Thermal resistance junction-ambient max -- -- 50 °C/W Tl Maximum lead temperature for soldering purpose 300 275 -- °C |
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