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M74HCT75B1R Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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M74HCT75B1R Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 9 page M74HCT75 5/9 CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES, MINIMUM PULSE WIDTH, SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle) Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 5 101010 pF CPD Power Dissipation Capacitance (note 1) 61 pF |
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