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SI1450DH Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI1450DH Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Vishay Siliconix Si1450DH TYPICAL CHARACTERISTICS 25 °C, unless noted Forward Diode Voltage vs. Temp Threshold Voltage 10 1 0.01 VSD − Source-to-Drain Voltage (V) 0.1 0 0.2 0.4 0.6 0.8 1 TJ = 25 °C TJ = 150 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ – Temperature (°C) rDS(on) vs. VGS vs. Temperature Single Pulse Power 0.00 0.02 0.04 0.06 0.08 012 3 45 VGS – Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 4.4 A 0 20 30 5 15 Time (sec) 25 1 600 100 0.001 0.1 10 0.01 10 Safe Operating Area, Junction-to-Case 0.001 0.01 0.1 1 10 100 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA = 25 °C Single Pulse *Limited by r DS(on) 10 ms 100 ms 1 s 10 s dc BVDSS Limited *VGS minimum VGS at which rDS(on) is specified |
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