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STB75NF75T4 Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STB75NF75T4 Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics 5/16 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 37.5V, ID= 45A, RG=4.7Ω, VGS=10V Figure 15 on page 9 25 100 66 30 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, di/dt = 100A/µs, VDD = 25V, TJ = 150°C Figure 17 on page 9 132 660 10 ns nC A |
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