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ST2S06A33PQR Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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ST2S06A33PQR Scheda tecnica(HTML) 6 Page - STMicroelectronics |
6 / 21 page Electrical characteristics ST2S06A33 - ST2S06B - ST2S06D33 6/21 4 Electrical characteristics Table 6. Electrical characteristics for ST2S06A (VIN_SW = VIN_A = 5 V, VO1,2 = 1.2 V, C1 = 4.7 µF, C2 = C3 = 22 µF, L1 = L2 = 3.3 µH, TJ = -30 to 125 °C unless otherwise specified. Typical values are referred to 25 °C Symbol Parameter Test conditions Min. Typ. Max. Unit FB1,2 Feedback voltage 784 800 816 mV IFB1,2 VFB pin bias current VFB = 1 V 600 nA IQ Quiescent current VFB = 1 V 1.2 mA IO1,2 Output current VIN = 2.5 to 5.5 V (1) 1. VO = 90% of nominal value. 0.8 A IMIN Minimum output current 1 mA %VO1,2/ ΔVIN Reference line regulation 2.5 V < VIN < 5.5 V 0.032 %VO/ VIN ΔVO1,2 Reference load regulation 10 mA < IO < 0.5 A 5.5 15 mV PWM fS PWM switching frequency VFB = 0.7 V, TA = 25°C 1.2 1.5 1.8 MHz DMAX Maximum duty cycle VFB = 0.7 V, TA = 25°C 85 94 % ISWL Switching current limitation 1 1.2 A ILKN NMOS leakage current VFB = 0.9 V, TA = 25°C 0.1 µA ILKP PMOS leakage current VFB = 0.9 V, TA = 25°C 0.1 µA RDSon-N NMOS switch on resistance ISW = 250 mA 0.15 0.3 Ω RDSon-P PMOS switch on resistance ISW = 250 mA 0.2 0.4 Ω η Efficiency IO = 20 mA to 100 mA 75 % IO = 100 mA to 0.5 A 90 % TSHDN Thermal shut down (2) 2. Guaranteed by design, but not tested in production. 130 150 °C THYS Thermal shut down hysteresis (2) 15 °C ΔVO1,2/ΔIO Load transient response (2) 100 mA < IO < 500 mA, tR = tF => 100 ns, TA = 25°C -5 +5 %VO Reset section tDEL Delay time TA = 25°C 80 85 ms VRES Reset in threshold measured on input pin VIN_A Rising 4.5 4.6 4.75 V VIN_A Falling 4.12 4.2 4.28 |
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