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M27128A-2F1 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte M27128A-2F1
Spiegazioni elettronici  NMOS 128K 16K x 8 UV EPROM
Download  10 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
control bus.
This ensures that all deselected memory devices
are in their low power standby mode and that the
output pins are only active when data is required
from a particular memory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, ICC, has three segments that
are of interest to the system designer: the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of this transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 1
µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7
µF bulk electrolytic capacitor should be used
between VCC and GND for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPPROM), all bits of the M27128A are in the “1"
state. Data is introduced by selectively program-
ming ”0s" into the desired bit locations. Although
only “0s” will be programmed, both “1s” and “0s”
can be present in the data word. The only way to
change a “0" to a ”1" is by ultraviolet light erasure.
The M27128A is in the programming mode when
VPP input is at 12.5V and E and P are at TTL low.
The data to be programmed is applied 8 bits in
parallel, to the data output pins. The levels required
for the address and data inputs are TTL.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M27128A EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
Mode
E
G
PA9
VPP
Q0 - Q7
Read
VIL
VIL
VIH
XVCC
Data Out
Output Disable
VIL
VIH
VIH
XVCC
Hi-Z
Program
VIL
VIH
VIL Pulse
X
VPP
Data In
Verify
VIL
VIL
VIH
XVPP
Data Out
Program Inhibit
VIH
XXX
VPP
Hi-Z
Standby
VIH
XXX
VCC
Hi-Z
Electronic Signature
VIL
VIL
VIH
VID
VCC
Codes Out
Note: X = VIH or VIL, VID = 12V
± 0.5%.
Table 3. Operating Modes
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
VIL
00100
00
0
20h
Device Code
VIH
10001
00
1
89h
Table 4. Electronic Signature
DEVICE OPERATION (cont’d)
3/10
M27128A


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