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P-TO263-3-2 Scheda tecnica(PDF) 2 Page - Infineon Technologies AG |
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P-TO263-3-2 Scheda tecnica(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page 2003-10-06 Page 2 SPP03N60S5 SPB03N60S5 Final data Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 3.3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA - - - 35 62 - Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=3.2A - 700 - Gate threshold voltage VGS(th) ID=135µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C - - 0.5 - 1 70 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=2A, Tj=25°C Tj=150°C - - 1.26 3.4 1.4 - Ω |
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