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OP292GP Scheda tecnica(PDF) 2 Page - Analog Devices

Il numero della parte OP292GP
Spiegazioni elettronici  Dual/Quad Single-Supply Operational Amplifiers
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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REV. B
–2–
OP292/OP492–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V
S = 5 V, VCM = O V, VO = 2 V, TA = 25 C unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
OP292
VOS
0.1
0.8
mV
–40
∞C £ TA £ +85∞C
0.3
1.2
mV
–40
∞C £ TA £ +125∞C
0.5
2.5
mV
OP492
VOS
0.1
1
mV
–40
∞C £ TA £ +85∞C
0.3
1.5
mV
–40
∞C £ TA £ +125∞C
0.5
2.5
mV
Input Bias Current
IB
450
700
nA
–40
∞C £ TA £ +85∞C0.75
2.5
mA
–40
∞C £ TA £ +125∞C
3.0
5.0
mA
Input Offset Current
IOS
750
nA
–40
∞C £ TA £ +85∞C
100
700
nA
–40
∞C £ TA £ +125∞C
0.4
1.2
mA
Input Voltage Range
0
4.0
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 4.0 V
75
95
dB
–40
∞C £ TA £ +85∞C70
93
dB
–40
∞C £ TA £ +125∞C65
90
dB
Large-Signal Voltage Gain
AVO
RL = 10 k , VO = 0.1 V to 4 V
25
200
V/mV
–40
∞C £ TA £ +85∞C10
100
V/mV
–40
∞C £ TA £ +125∞C5
50
V/mV
Offset Voltage Drift
DVOS/DT
–40
∞C £ TA £ +125∞C2
10
mV/∞C
Long-Term VOS Drift
DVOS/DTNote 1
1
mV/Month
Bias Current Drift
DIB/DT
–40
∞C £ TA £ +85∞C6
pA/
∞C
–40
∞C £ TA £ +125∞C
400
pA/
∞C
Offset Current Drift
DIOS/DT
–40
∞C £ TA £ +85∞C
1.5
pA/
∞C
–40
∞C £ TA £ +125∞C2
pA/
∞C
OUTPUT CHARACTERISTICS
Output Voltage Swing
High
VOUT
RL = 100 k
to GND
–40
∞C £ TA £ +125∞C
4.0
4.3
V
RL = 2 k
to GND
3.8
4.1
V
–40
∞C £ TA £ +125∞C
3.7
3.9
V
Low
VOUT
RL = 100 k
to V+
8
20
mV
–40
∞C £ TA £ +125∞C12
20mV
RL = 2 k
to V+
280
450
mV
–40
∞C £ TA £ +125∞C
300
550
mV
Short-Circuit Current Limit
ISC
58
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 4.5 V to 30 V, VO = 2 V
75
95
dB
–40
∞C £ TA £ +125∞C70
90
dB
Supply Current Per Amp
ISY
VO = 2 V
OP292, OP492
0.8
1.2
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 k
3V/
ms
–40
∞C £ TA £ +125∞C1
2
V/
ms
Gain Bandwidth Product
GBP
4
MHz
Phase Margin
m
75
Degrees
Channel Separation
CS
fO = 1 kHz
100
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
25
mV p-p
Voltage Noise Density
en
f = 1 kHz
15
nV/
÷Hz
Current Noise Density
in
0.7
pA/
÷Hz
NOTES
1Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125
∞C with LTPD of 1.3.
Specifications subject to change without notice.


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