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OP292GP Scheda tecnica(PDF) 2 Page - Analog Devices |
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OP292GP Scheda tecnica(HTML) 2 Page - Analog Devices |
2 / 20 page REV. B –2– OP292/OP492–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ V S = 5 V, VCM = O V, VO = 2 V, TA = 25 C unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP292 VOS 0.1 0.8 mV –40 ∞C £ TA £ +85∞C 0.3 1.2 mV –40 ∞C £ TA £ +125∞C 0.5 2.5 mV OP492 VOS 0.1 1 mV –40 ∞C £ TA £ +85∞C 0.3 1.5 mV –40 ∞C £ TA £ +125∞C 0.5 2.5 mV Input Bias Current IB 450 700 nA –40 ∞C £ TA £ +85∞C0.75 2.5 mA –40 ∞C £ TA £ +125∞C 3.0 5.0 mA Input Offset Current IOS 750 nA –40 ∞C £ TA £ +85∞C 100 700 nA –40 ∞C £ TA £ +125∞C 0.4 1.2 mA Input Voltage Range 0 4.0 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.0 V 75 95 dB –40 ∞C £ TA £ +85∞C70 93 dB –40 ∞C £ TA £ +125∞C65 90 dB Large-Signal Voltage Gain AVO RL = 10 k , VO = 0.1 V to 4 V 25 200 V/mV –40 ∞C £ TA £ +85∞C10 100 V/mV –40 ∞C £ TA £ +125∞C5 50 V/mV Offset Voltage Drift DVOS/DT –40 ∞C £ TA £ +125∞C2 10 mV/∞C Long-Term VOS Drift DVOS/DTNote 1 1 mV/Month Bias Current Drift DIB/DT –40 ∞C £ TA £ +85∞C6 pA/ ∞C –40 ∞C £ TA £ +125∞C 400 pA/ ∞C Offset Current Drift DIOS/DT –40 ∞C £ TA £ +85∞C 1.5 pA/ ∞C –40 ∞C £ TA £ +125∞C2 pA/ ∞C OUTPUT CHARACTERISTICS Output Voltage Swing High VOUT RL = 100 k to GND –40 ∞C £ TA £ +125∞C 4.0 4.3 V RL = 2 k to GND 3.8 4.1 V –40 ∞C £ TA £ +125∞C 3.7 3.9 V Low VOUT RL = 100 k to V+ 8 20 mV –40 ∞C £ TA £ +125∞C12 20mV RL = 2 k to V+ 280 450 mV –40 ∞C £ TA £ +125∞C 300 550 mV Short-Circuit Current Limit ISC 58 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 4.5 V to 30 V, VO = 2 V 75 95 dB –40 ∞C £ TA £ +125∞C70 90 dB Supply Current Per Amp ISY VO = 2 V OP292, OP492 0.8 1.2 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 k 3V/ ms –40 ∞C £ TA £ +125∞C1 2 V/ ms Gain Bandwidth Product GBP 4 MHz Phase Margin m 75 Degrees Channel Separation CS fO = 1 kHz 100 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 25 mV p-p Voltage Noise Density en f = 1 kHz 15 nV/ ÷Hz Current Noise Density in 0.7 pA/ ÷Hz NOTES 1Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125 ∞C with LTPD of 1.3. Specifications subject to change without notice. |
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