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IRLU4343-701PBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRLU4343-701PBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 11 page  2 www.irf.com IRLR/U4343PbF & IRLU4343-701PbF S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 42 50 m Ω ––– 57 65 VGS(th) Gate Threshold Voltage 1.0 ––– ––– V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -4.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 2.0 µA ––– ––– 25 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 8.8 ––– ––– S Qg Total Gate Charge ––– 28 42 Qgs Pre-Vth Gate-to-Source Charge ––– 3.5 ––– VGS = 10V Qgd Gate-to-Drain Charge ––– 9.5 ––– ID = 19A Qgodr Gate Charge Overdrive ––– 15 ––– See Fig. 6 and 19 td(on) Turn-On Delay Time ––– 5.7 ––– tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 23 ––– ns tf Fall Time ––– 5.3 ––– Ciss Input Capacitance ––– 740 ––– Coss Output Capacitance ––– 150 ––– pF Crss Reverse Transfer Capacitance ––– 59 ––– Coss Effective Output Capacitance ––– 250 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current Ãi A EAR Repetitive Avalanche Energy i mJ Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 26 (Body Diode) A ISM Pulsed Source Current ––– ––– 80 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 52 78 ns Qrr Reverse Recovery Charge ––– 100 150 nC VDS = 25V, ID = 19A VDS = 44V VDD = 28V, VGS = 10V Ãe integral reverse ƒ = 1.0MHz, See Fig.5 ID = 19A RG = 2.5Ω VGS = 0V, VDS = 0V to -44V MOSFET symbol showing the See Fig. 14, 15, 17a, 17b Typ. ––– Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 4.7A e TJ = 25°C, IS = 19A, VGS = 0V e TJ = 25°C, IF = 19A di/dt = 100A/µs e VGS = 0V Conditions p-n junction diode. VDS = 50V and center of die contact f Max. 160 VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V, ID = 3.8A e VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V |
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