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FDG332PZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG332PZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -13 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V -1 µA IGSS Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -0.4 -0.7 -1.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 2.5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -2.6A 73 95 m Ω VGS = -2.5V, ID = -2.2A 90 115 VGS = -1.8V, ID = -1.9A 117 160 VGS = -1.5V, ID = -1.0A 147 330 VGS = -4.5V, ID = -2.6A , TJ = 125°C 100 133 gFS Forward Transconductance VDD = -5V, ID = -2.6A 9 S Dynamic Characteristics Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1MHZ 420 560 pF Coss Output Capacitance 85 115 pF Crss Reverse Transfer Capacitance 75 115 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -10V, ID = -2.6A, VGS = -4.5V, RGEN = 6Ω 5.2 10 ns tr Rise Time 4.8 10 ns td(off) Turn-Off Delay Time 59 95 ns tf Fall Time 28 45 ns Qg Total Gate Charge VGS = -4.5V, VDD = -10V, ID = -2.6A 7.6 10.8 nC Qgs Gate to Source Charge 0.9 nC Qgd Gate to Drain “Miller” Charge 1.9 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current -0.6 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -0.6A (Note 2) -0.7 -1.2 V trr Reverse Recovery Time IF = 2.6A, di/dt = 100A/µs 28 45 ns Qrr Reverse Recovery Charge 8 13 nC and Maximum Ratings Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. a. 170°C/W when mounted on a 1 in2 pad of 2 oz copper . b. 260°C/W when mounted on a minimum pad of 2 oz copper. |
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