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FDG332PZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG332PZ
Spiegazioni elettronici  P-Channel PowerTrench짰 MOSFET -20V, -2.6A, 97m廓
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG332PZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to 25°C
-13
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8V, VDS= 0V
±10
µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-0.4
-0.7
-1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
2.5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = -4.5V, ID = -2.6A
73
95
m
VGS = -2.5V, ID = -2.2A
90
115
VGS = -1.8V, ID = -1.9A
117
160
VGS = -1.5V, ID = -1.0A
147
330
VGS = -4.5V, ID = -2.6A , TJ = 125°C
100
133
gFS
Forward Transconductance
VDD = -5V, ID = -2.6A
9
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -10V, VGS = 0V, f = 1MHZ
420
560
pF
Coss
Output Capacitance
85
115
pF
Crss
Reverse Transfer Capacitance
75
115
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -10V, ID = -2.6A,
VGS = -4.5V, RGEN = 6Ω
5.2
10
ns
tr
Rise Time
4.8
10
ns
td(off)
Turn-Off Delay Time
59
95
ns
tf
Fall Time
28
45
ns
Qg
Total Gate Charge
VGS = -4.5V, VDD = -10V, ID = -2.6A
7.6
10.8
nC
Qgs
Gate to Source Charge
0.9
nC
Qgd
Gate to Drain “Miller” Charge
1.9
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.6
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -0.6A
(Note 2)
-0.7
-1.2
V
trr
Reverse Recovery Time
IF = 2.6A, di/dt = 100A/µs
28
45
ns
Qrr
Reverse Recovery Charge
8
13
nC
and Maximum Ratings
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
a. 170°C/W when mounted on
a 1 in2 pad of 2 oz copper .
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.


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