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BZX55-C30 Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BZX55-C30 Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page Pb RoHS COMPLIANCE RoHS COMPLIANCE BZX55C SERIES 500mW Zener Diode Features Fast switching speed General purpose rectification Silicon epitaxial planar construction Mechanical Data Case: DO-35 Leads:Solderableper MIL-STD-202, Method 208 Polarity: Cathode band Marking: Type number Weight: 0.13 grams (approx.) DO-35 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Forward Voltage @ IF = 100mA VF 1.0 V Power Dissipation (Note 1) Pd 500 mW Thermal Resistance Junction to Ambient Air (Note 2) RθJA 0.3 K /mW Operating and Storage Temperature Range TJ, TSTG -65 to + 175 OC Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case. 2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. Version: A07 |
Codice articolo simile - BZX55-C30 |
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Descrizione simile - BZX55-C30 |
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