STP20NM50FD datasheet(2/11 Pages) STMICROELECTRONICS

Il numero della parte	STP20NM50FD

Spiegazioni elettronici	N-CHANNEL 500V - 0.22W - 20A TO-220/TO-220FP/D2PAK FDmesh??Power MOSFET (with FAST DIODE)

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STP20NM50FD - STF20NM50D - STB20NM50FD

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ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

STP20NM50FD

STB20NM50FD

STF20NM50D

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain-gate Voltage (RGS =20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

20

20 (*)

A

ID

Drain Current (continuous) at TC = 100°C

14

14 (*)

A

IDM ( )

Drain Current (pulsed)

80

80 (*)

A

PTOT

Total Dissipation at TC =25°C

192

45

W

Derating Factor

1.2

0.36

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

20

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220 / D2PAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

0.65

2.8

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

10

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25°C, ID =IAR,VDD =35 V)

700

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

500

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC =125 °C

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±30V

±100

nA

VGS(th

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

34

5V

RDS(on)

Static Drain-source On

Resistance

VGS =10V,ID = 10A

0.22

0.25

Ω

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