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2N1711 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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2N1711 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  2N1613 2N1711 January 1989 SWITCHES AND UNIVERSAL AMPLIFIERS The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit VCBO Collector-base Voltage (IE =0) 75 V VCER Collector-emitter Voltage (RBE ≤ 10 Ω)50 V VEBO Emitter-base Voltage (I C =0) 7 V I C Collector Current 500 mA Pto t Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C at T cas e ≤ 100 °C 0.8 3 1.7 W W W Tstg,Tj Storage and Junction Temperature – 65 to 200 °C Products approved to CECC 50002-104 avail- able on request. DESCRIPTION TO-39 INTERNAL SCHEMATIC DIAGRAM 1/5 |
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