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IRF3202SPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF3202SPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V
48 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V
30 A IDM Pulsed Drain Current
190 PD @TC = 25°C Power Dissipation 69W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy
270 mJ IAR Avalanche Current 29A EAR Repetitive Avalanche Energy 6.9mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C 12/21/04 IRL3202SPbF HEXFET® Power MOSFET PD - 95954 S D G VDSS = 20V RDS(on) = 0.016Ω ID = 48A These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Description 2 D Pak Parameter Typ. Max. Units RθJC Junction-to-Case 1.8 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40 °C/W Thermal Resistance Absolute Maximum Ratings l Advanced Process Technology l Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free |
Codice articolo simile - IRF3202SPBF |
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Descrizione simile - IRF3202SPBF |
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